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SiLAS

Revolutionize the electronics industry by introducing a material that features a direct band gap

SiLAS will develop hexagonal crystal phase SiGe (Hex-SiGe) that will significantly reduced energy consumption in electronic devices.

MAIN THEMES:

Nanotech & Materials

TOPICS:

MicroelectronicsLaserChipssemiconductors

COORDINATING ORGANISATION:

Technische Universiteit Eindhoven

WEBSITE:

www.silasproject.eu/fet-open

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About FETFX project — Privacy notice

This project has received funding from the European Union’s Horizon 2020 FET Programme under grant agreement No. 824753.

«An experiment disproving a prediction is discovery»

ENRICO FERMI

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